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A MOSFET gate driver switch IPD for automotive high current applications : TPD7106F

2020-05-25 | Return
Toshiba Electronic Devices & Storage Corporation has launched “TPD7106F”: a gate driver switch IPD[1] that controls conduction and shut-off of current that is supplied for automotive Electronic Control Units (ECUs) such as junction boxes and body control modules.

The new product can form a high-side switch supporting high current application in combination with Toshiba’s automotive low On-resistance N-channel MOSFET[2]. Unlike mechanical relays, the switch does not have contact wear, so it makes devices maintenance-free.

In order to protect MOSFETs in the event of short-circuit, there is an input/output terminal to turn off MOSFETs rapidly, and it can be controlled independently from micro-controllers. It turns MOSFETs off against unusual operation.

Furthermore, it has 150 °C of high operating temperature rating, and enables operating under high temperature environment. The leakage current is suppressed in case of reversed battery connection, and it supports source common connection of MOSFETs. It features low stand-by current, maximum 5 μA.

And it uses small SSOP16[3] package and this contributes to downsizing and low-power-consumption of automotive ECUs.

Notes :
[1] IPD (Intelligent Power Device)
[2] Example of use devices : TKR74F04PBx4 (40 V/250 A)
[3] SSOP16 : 5.0×6.4 mm (typ.)

Features
AEC-Q100 qualified
Can be used in combination with a low On-resistance N-channel MOSFET[2] depending on the load current
Built in the input/output terminal for MOSFET rapid turn-off against unusual operation

Applications
Automotive equipment:
ECUs (Body control modules and junction boxes, etc.)
Power distribution modules
Semiconductor relays

Product Specifications
(Unless otherwise specified, @Ta=25 °C)

Part number

TPD7106F

Package

SSOP16

Absolute
maximum
ratings

Supply voltage VDD(1)  (V)

-18 to 27

Supply voltage VDD(2)  (V)

@t≤500 ms

40

Input voltage  VSTBY  (V)

-0.3 to 40.0

Input voltage  VIN(1), VIN(2)  (V)

-0.3 to 6.0

CPV voltage  VCPV  (V)

40

TEST pin voltage  VTEST  (V)

40

Output source current  IOUT1(1)  (mA)

-10

Output sink current  IOUT1(2)  (mA)

10

Output sink current  IOUT2  (mA)

400

DIAG Output voltage  VDIAG  (V)

-0.3 to 40.0

DIAG Output current  IDIAG  (mA)

5

Power dissipation  PD  (W)

1.16

Operating temperature  Topr  (°C)

-40 to 150

Operating
ranges

Operating supply voltage  VDD  (V)

@Tj= -40 to 150 °C

4.5 to 27.0

Electrical
characteristics

Rapid off drive operation time  tO2ON typ.  (μs)

@Tj=25 °C

100

Supply current  IDD(1) max  (μA)

@standby, Tj=25 °C

5.0


Block Diagram


Note : Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified for explanatory purposes.

Example of Application Circuit


Note : The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass production design stage. Providing these application circuit examples does not grant any license for industrial property rights.

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

Source:http://www.semicon.toshiba.co.jp/eng/