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Newest Qorvo® Technology Enables Higher-Performance, GaN Discrete LNAs and Drivers

2016-09-30 | Return

GREENSBORO, NC – September 30, 2016 – Qorvo® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, today introduced a new family of gallium nitride (GaN) die transistors with the higher frequency performance and low noise essential for advanced applications in communications, radar and defense RF systems.

The family includes six new GaN transistors manufactured using Qorvo’s industry-unique 0.15um GaN on silicon carbide (SiC) process – QGaN15 – and their associated models. The QGaN15 process enables these transistors to offer high frequency operation of up to 25 GHz. This supports die-level designs that deliver higher-frequency, cost-effective discrete technology up through K-band applications.

Roger Hall, general manager of High Performance Solutions at Qorvo said, "The combination of higher-performance GaN products, complementary models and dedicated applications engineering support sets Qorvo apart. We help designers get to market quickly."

Linear, non-linear, and noise models, which enable rapid, accurate performance testing and speed production readiness, are available from simulation leader and partner, Modelithics, Inc.. The models offer features such as scaling of operating voltage, ambient temperature and self-heating effects, as well as intrinsic voltage/current node access for waveform optimization.

The table below outlines specifications for the QGaN15 products.

Product	Freq (GHz)	Vd(V)	Psat (W)	PAE (%)	SS Gain (dB)	NF (dB)
TGF2933	DC-25	28	7	57	15	1.3
TGF2934	DC-25	28	14	49	14	1.5
TGF2935	DC-25	28	5	60	16	1.3
TGF2936	DC-25	28	10	58	16	1.3
TGF2941	DC-25	28	4	60	16	1.3
TGF2942	DC-25	28	2	59	18	1.2

Source：http://www.qorvo.com/