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6 Watt DC-DC converter optimized for IGBT, SiC, and MOSFET gate drive applications

2016-09-13 | Return
Murata has announced an extension to their MGJ6 series of isolated 6 Watt dual output DC-DC converters from Murata Power Solutions. Optimized to suit the bipolar voltages required for high-side and low-side IGBT, SiC, and MOSFET gate drive applications, the MGJ6 series is available now in SIP, DIP, and a low profile surface mount package format. The series comprises combinations of wide input voltages with nominals of 5, 12, or 24 VDC and +15 / -5, +15 / -10 or +20 / -5 VDC outputs. Suitable for low to medium power applications that require a DC link voltage up to 3 kVDC, the asymmetric outputs provide optimum drive levels to maintain a high system efficiency with low EMI levels. Also, with its very low coupling capacitance, typically 15pF EMI coupling through the converter is reduced.

The MGJ6 series has a characterized dV/dt immunity of 80 kV/us minimum at 1.6 kV, contributing to a high degree of reliability in fast switching drive systems. The series also has characterized partial discharge performance, crucial to achieving a long service life in high-performance applications.

Certification to safety standard UL60950 for reinforced insulation and the medical 3rd edition safety standard ANSI/AAMI ES60601-1 for 2 MOOPs and 2 MOPPs is currently pending. With a creepage and clearance of 8 mm, the MGJ6 will satisfy safety agency requirements for extra-high working voltages.

Murata’s product marketing manager, Ann-Marie Bayliss comments, “The MGJ6 series provides optimized voltages for power gate drives for the best overall system performance and efficiency. With characterized partial discharge performance, they are now available in a choice of form factors.”

Short circuit and overload protection features are standard across the range and a frequency synchronization/enable input pin can simplify EMC filter design.

Features

。Patents Pending

No opto feedback

Optimized bipolar output voltages for IGBT/SiC & MOSFET gate drives

Configurable dual outputs for all gate drive applications: +15V/-5V, +15V/-10V & +20V/-5V outputs

Reinforced insulation to UL60950 recognition pending

ANSI/AAMI ES60601-1 recognition pending

Characterized dv/dt immunity 80kV/μs at 1.6kV

Characterized partial discharge performance

5.2kVDC isolation test voltage “Hi Pot Test”

Ultra-low coupling capacitance 15pF

DC link voltage 3kVDC

5V, 12V & 24V input voltages

105°C operating temperature

Click here for more information.

Source:http://www.murata.com/