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Toshiba Launches Low-input Current Drive, Rail-to-Rail Output, Gate-drive Photocouplers

2016-08-26 | Return

Low-height package products allow bufferless direct drive of low-to-medium-power IGBTs and MOSFETs from microcontrollers

TOKYO—Toshiba Corporation’s (TOKYO: 6502) Storage & Electronic Devices Solutions Company today announced the launch of a series of low-input current drive, rail-to-rail output, gate-drive photocouplers in a low-height package that allows bufferless direct drive of low- to medium-power IGBTs and MOSFETs from microcontrollers. Shipments of the three new products; “TLP5771”, “TLP5772” and “TLP5774” start from today.

With a threshold input current of 2mA (max), half the 4mA (max) of Toshiba’s existing products[1], the new photocouplers allow bufferless direct drive of low- to medium-power IGBTs and MOSFETs from microcontrollers. The new line-up is available in three levels of peak output currents, 1A, 2.5A and 4A, ensuring they meet a wide range of user requirements.

The new photocouplers have rail-to-rail output and also reduces the operation voltage to 10V (min) against the 15V (min) of Toshiba’s existing products[１], which can contribute to higher system efficiency and lower power consumption. Furthermore, the 2.3mm low-height SO6L package can contribute to the development of thinner and smaller systems. Main applications include servo amplifiers, small motor drivers, general-purpose inverters, photovoltaic (PV) inverters and industrial sewing machines.

Main Specifications

(Isolation Voltage, Common-mode Transient Immunity: @Ta = 25 degrees Celsius,
Other Specs: @Ta = -40 to 110 degrees Celsius)

Part Number	TLP5771	TLP5772	TLP5774
Package	SO6L
Peak Output Current	±1.0 A	±2.5 A	±4.0 A
Operation Voltage Range	10 to 30 V
Threshold Input Current	2 mA (max)
Supply Current	3 mA (max)
Propagation Delay Time	150 ns (max)
Propagation Delay Skew	80 ns (max)
Rail-to-Rail output	Equipped
UVLO Function	Equipped
Creepage / Clearance Distance	8 mm (min)
Isolation Voltage	5,000 Vrms (min)
Common-mode Transient Immunity	±35 kV/μs (min)
Operation Temperature Range	-40 to 110 degrees Celsius
Examples of Applicable Power Devices	Small-scale IGBTs (up to 20 A) and MOSFETs	Mid-scale IGBTs (up to 80 A) and MOSFETs	Mid-scale IGBTs (up to 100 A) and MOSFETs

Notes
[1] Toshiba’s existing products: TLP5751, TLP5752 and TLP5754

Follow the links below for more on the new products and Toshiba IGBT/MOSFET-drive photocouplers.
http://toshiba.semicon-storage.com/ap-en/product/opto/photocoupler/ic-igbt.html

Source：http://www.semicon.toshiba.co.jp/eng/