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NXP GaN Transistors Bring Broad Bandwidths, High Power, and Ruggedness Suited for Electronic Warfare and Communication Systems

2016-05-25 | Return

SAN FRANCISCO, May 25, 2016 (GLOBE NEWSWIRE) -- NXP Semiconductors N.V. (NASDAQ:NXPI), today expanded its portfolio of broadband gallium nitride (GaN) RF power transistors ideal for electronic warfare and battlefield radio applications. The expansion includes six new driver or final-stage amplifiers that have frequency coverage as broad as 1 to 3000 MHz.

The new GaN on SiC transistors combine high power density, ruggedness, and very flat frequency response over wide bandwidths. All are input matched to optimize operating frequency range, and can withstand a VSWR greater than 20:1 with 3 dB overdrive without degradation. They are also part of NXP’s Product Longevity Program.

The transistors’ broadband frequency coverage from HF to S-band allows them to cover virtually all frequencies used by radios or the lower-frequency sections of electronic systems. This reduces the number of RF power transistors required to build an amplifier with a specific RF output level, which decreases amplifier size and bill of materials.

The new transistors include:

MMRF5011N (28V) and MMRF5013N (50V): operate from 1 to 3000 MHz with RF output power up to 12 W CW, 15 dB gain, and 60% efficiency, housed in an OM-270-8 over-molded plastic package

MMRF5015NR5: operates from 1 to 2700 MHz with RF output power up to 125 W CW, gain of 16 dB, and efficiency of 64%, housed in an OM-270-2 over-molded plastic package

MMRF5019N: operates from 1 to 3000 MHz with RF output power up 25 W CW, gain of 18 dB, and efficiency of 40%, housed in an OM-270-8 over-molded plastic package

MMRF5021H: operates from 1 to 2700 MHz with RF output power up to 250 W CW, 16 dB gain, and 58% efficiency, housed in a NI-780H-4L air-cavity ceramic package

MMRF5023N: operates from 1 to 2700 MHz with RF output power up to 63 W CW, 16 dB gain, and 60% efficiency, housed in an OM-270-2 over-molded plastic package

“Our customers want to reduce the size, weight, and power of military systems even at the device level,” said Paul Hart, executive vice president and general manager of NXP’s RF Power business unit. “Our new GaN transistors meet these requirements and can provide improved ruggedness, broad operating bandwidth and high efficiency.”

The new transistors join NXP’s expanding portfolio of RF power transistors ideal for defense systems that operate in HF, VHF, UHF, and L-band radar, IFF transponders and avionics systems. In addition to GaN devices, NXP offers more than 40 LDMOS transistors covering 1 to 3000 MHz with RF output power up to 1500 W.

Source：http://www.nxp.com/