Manufacturers
- Abracon
- Adam Tech
- Aerospace, Defense & Marine
- Agastat
- AIC
- AKM Semiconductor
- Alcoswitch
- Allegro
- Alps Electric
- Altera
- AMI Semiconductor
- AMP
- ams
- Analog Devices (ADI)
- Aptina Imaging
- Atmel
- Avago / Broadcom
- AVX
- Axicom
- Bccomponents
- Beyschlag
- BI Technologies
- Bourns Inc.
- Bowei Integrated Circuits
- Bridgelux
- Buchanan
- California Micro Devices
- Catalyst Semiconductor
- CGS
- Cirrus Logic
- Citizen Electronics
- CML Microcircuits
- Coiltronics
- Cooper Bussmann
- Corcom
- Core Logic
- Cree
- CSR PLC
- CTS
- Cypress Semiconductor
- Dale
- Data Image
- Deutsch
- Diodes Incorporated
- DOMINANT Opto Technologies
- E-T-A
- Eaton
- ECS
- Edison Opto
- Elcon
- EPCOS
- Epistar
- Epson
- Everlight Electronics
- Exar
- Fairchild Semiconductor
- FCI
- Freescale Semiconductor
- Fremont Micro Devices (FMD)
- Fujitsu Semiconductor
- Fulltech Electric
- General Semiconductor
- Harvatek
- Holsworthy
- Hsuan Mao Technology
- IDT
- Infineon Technologies
- Innolux
- International Rectifier (IR)
- Intersil
- IRC
- ISSI
- IXYS-IC
- Jing Cheng Electronical
- JL World
- Johanson Dielectrics
- Johanson Technology
- JRC / NJR
- JST
- KEC
- Kilovac
- Kingbright
- Kyocera Industrial Ceramics
- LEDiL
- Linear Technology / ADI
- Lite-On Technology
- Littelfuse
- Lumex
- Lumileds
- Luminary Micro
- Luminus Devices
- Macronix
- Maojwei / ZJPT
- Maxim Integrated
- MCC
- Mean Well Enterprises
- Microchip Technology
- Micron
- Microsemi
- Mini-Circuits
- Molex
- Murata Manufacturing
- Murata Power Solutions
- MWT
- National Semiconductor
- Nichicon
- Nippon Chemi-Con
- NJR / JRC
- NVE
- NXP Semiconductors
- OEG
- Omnivision
- ON Semiconductor
- Optek Technology
- Optrex
- OSRAM Opto Semiconductors
- OTAX
- Panasonic
- Peregrine(pSemi)
- Potter & Brumfield
- Power Integrations
- PowerStor
- Preci-Dip
- Prewell
- Products Unlimited
- Pulse Electronics
- PulseCore Semiconductor
- Qorvo
- Raychem
- Renesas Electronics
- RFMD
- Richtek Technology
- ROHM Semiconductor
- Rubycon
- Samsung Electro-Mechanics
- Samsung Semiconductor
- Schaffner
- Schrack
- Seiko Instruments, Inc. (SII)
- Semtech
- Sensata
- Seoul Semiconductor
- Sfernice
- Sharp Display
- Sharp Microelectronics
- Silicon Labs
- Siliconix
- Skyworks Solutions
- SoniCrest / JL World
- Spansion
- Sprague
- Stanley Electric
- STMicroelectronics
- Sunny Electronics
- Susumu (SSM)
- Taimag
- Taiyo Yuden
- TDK
- TDK-Lambda
- TE Connectivity
- Teccor
- Texas Instruments (TI)
- Thin Film
- Tianma Micro-electronics
- TOCOS
- TOKO
- Toshiba Electronic Components
- TT Electronics
- Tusonix
- TXC
- Tyntek
- Vishay
- Vishay Precision Group
- Vitramon
- Walsin Technology
- Weidmuller
- Welwyn
- Wickmann
- Winbond
- Xilinx
- Yageo
- Zetex Semiconductors
- ZJPT / Maojwei
News
IDT’s Latest Broadband RF Switches Deliver Industry-Leading Isolation and Power Handling While Maintaining Low Insertion Loss
2016-05-19 | ReturnAt 4 GHz the F2932 and F2933 deliver:
1. high isolation of 66dB
2. low distortion of 64dBm IIP3 @ 15dBm tones, 1MHz channel spacing
3. insertion loss of 0.93 dB
4. P1dB of >35dBm
The inherent benefits over most competitive products, particularly when compared to typical GaAs-based switches, are:
1. better RF performance
2. greater reliability
3. easier integration
4. lower total solution cost
“These two new devices offer one of the industry’s highest isolation values, and when combined with their low distortion and low insertion loss they provide superior performance for many different high-isolation applications,” said Chris Stephens, general manager of IDT’s RF division. “These switches represent the latest way IDT is helping engineers meet the demanding requirements of today’s RF designs.”
F2932 and F2933 offer similar RF performance, pin out and control, with the F2932 having an additional Enable/Disable feature allowing all RF paths to be put into an off state and disabling the VCTL feature.
About IDT RF Products
IDT offers high-performance and full-featured radio frequency (RF) products that deliver exceptional performance in compact packages. All IDT RF signal path devices are silicon based, offering inherent advantages over GaAs-based products. The portfolio includes RF mixers, RF and IF variable gain amplifiers (VGA), digital step attenuators (DSA), demodulators, broadband modulators, RF switches, and wideband voltage variable attenuators. IDT’s RF devices are ideal for use in such products as cellular 4G base stations, broadband repeaters, distributed antenna systems and microwave backhaul equipment.
Source:http://www.idt.com/