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Qorvo® GaN 50 Volt Transistors Pump Up Power and Performance

2016-05-20 | Return

GREENSBORO, NC and HILLSBORO, OR – May 20, 2016 – Qorvo® (Nasdaq: QRVO), a leading provider of core technologies and RF solutions for mobile, infrastructure and defense applications, today introduced six new 50 Volt gallium nitride (GaN) transistors designed to optimize power performance for commercial and defense radar, communications systems and avionics.

Roger Hall, Qorvo's general manager of Defense & Aerospace Products said, "This new family of 50V GaN transistors improves system performance by offering more power gain and power-added efficiency. Qorvo can better enable defense equipment such as phased array radars, to deliver higher performance while managing size, cost and power."

Qorvo's new family of 50V GaN transistors offers significant operational and system cost savings from greater system-level efficiency. The small device size and higher impedance input/output leads help optimize board designs for radar, communications, avionics, wideband amplifiers and test instrumentation.

The QPD1009 and QPD1010 are now available in low-cost 3x3mm plastic QFN packages, while the QPD1008(L) and QPD1015(L) are now available in industry standard, thermally enhanced NI-360 air cavity ceramic packages, in eared and earless versions. This family of GaN transistors operates from 10W up to 125W power levels.

Product	Psat (W)	Freq (GHz)	Output Power (P3dB)	PAE (%)	SS Gain (dB)	Packaging (mm)
QPD1009	15	DC-4	42	72	24	3x3 QFN
QPD1010	10	DC-4	40	70	25	3x3 QFN
QPD1008	125	DC-3.2	51	70	18	Earless NI-360
QPD1008L	125	DC-3.2	51	70	18	Eared NI-360
QPD1015	65	DC-3.7	48	70	20	Earless NI-360
QPD1015L	65	DC-3.7	48	70	20	Eared NI-360

Source：http://www.qorvo.com/