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New press pack IEGT that contributes to size reduction and higher efficiency of industrial equipment such as high voltage direct current transmission systems and inverters for industrial motor drives

2021-12-06 | Return

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has started mass production of press pack Injection Enhanced Gate Transistor (IEGT) “ST2000GXH32” that employs trench type

IEGT chips and newly developed high-speed diode chips for high voltage converters. This product has a collector-emitter voltage rating of 4500 V and a collector current (DC) rating of 2000 A.
The structure of cathode in the diode suppresses voltage oscillation during reverse recovery, improves reverse recovery tolerance. The newly developed voltage blocking structure realizes of withstand voltage at high temperature. Compared with the Toshiba’s existing product[1], new product ST2000GXH32 suppresses voltage oscillation during small reverse recovery current. This allows use of a small gate-drive resistor (RG(on)) and reduces turn-on switching loss[2][3] (Eon) by approximately 30 % from 12.0 J to 8.4 J (typical). Furthermore, the improved cathode enhances the peak power during reverse recovery by approximately 29 %. Furthermore, junction temperature rating (Tj) of ST2000GXH32 has been increased from 125 °C to 150 °C (maximum) by improving high temperature tolerance of the diode.
ST2000GXH32 contributes to size reduction and energy saving of high-voltage industrial equipment such as DC power transmissions, static VAR compensators, and motor drive inverters and converters.

Notes:

[1] ST2000GXH31
[2] ST2000GXH31 condition: VCC=2800 V, IC=2000 A, RG(on)=5.6 Ω, LS≈300 nH, Tj = 125 °C
[3] ST2000GXH32 condition: VCC=2800 V, IC=2000 A, RG(on)=3.6 Ω, LS≈300 nH, Tj = 150 °C

Applications
> DC power transmission
> Static VAR compensator
> Industrial motor drive

Features
> Low turn-on switching loss:
Eon(typ.)=8.4 J (@VCC=2800 V, IC=2000 A, RG(on)=3.6 Ω, LS≈300 nH, Tj=150 ℃)
> Wide reverse recovery safe operating area
> Maximum junction temperature rating: Tj(max)=150 ℃

Main Specifications

(@Tc=25 °C, unless otherwise specified)

Part number			ST2000GXH32
Package			PPI125A2
Absolute maximum ratings	Collector-emitter voltage V_CES (V)		4500
	Gate-emitter voltage V_GES (V)		±20
	Collector current (DC) I_C (A)	@T_f=101 °C	2000
	Diode forward current (DC) I_F (A)	@T_f=64 °C	2000
	Junction temperature T_j (°C)		-40 to 150
Electrical characteristics	Collector-emitter saturation voltage V_CE(sat) typ. (V)	@V_GE=15 V, I_C=2000 A, T_j=150 °C	2.70
	Forward voltage V_F typ. (V)	@I_F=2000 A, T_j=150 °C	2.80
	Turn-on switching loss E_on typ. (J)	@V_CC=2800 V, I_C=2000 A, R_G(on)=3.6 Ω, L_S≈300 nH, T_j=150 °C	8.4
	Turn-off switching loss E_off typ. (J)	@V_CC=2800 V, I_C=2000 A, R_G(off)=56 Ω, L_S≈300 nH, T_j=150 °C	13.2
	Reverse recovery loss E_rr typ. (J)	@V_CC=2800 V, I_F=2000 A, R_G(on)=3.6 Ω, L_S≈300 nH, T_j=150 °C	3.5

Internal Circuit

Application Circuit Examples

Note:
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

Information in this document, including product prices and specifications, content of services and contact information, is currect on the date of the announcement but is subject to change without prior notice.

Source: http://www.semicon.toshiba.co.jp/eng/