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Toshiba Launches its 3rd Generation SiC MOSFETs that Contribute to the Higher Efficiency of Industrial Equipment

2022-08-30 | 返回
- The lineup covers 1200V and 650V products -

KAWASAKI, Japan— Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched new power devices, the “TWxxNxxxC series,” its 3rd generation silicon carbide(SiC) MOSFETs[1][2] that deliver low on-resistance and significantly reduced switching loss. Ten products, five 1200V and five 650V products, have started shipping today.

The new products reduce on-resistance per unit area (RDS(ON)A) by about 43%[3], allowing the drain-source on-resistance * gate-drain charge (RDS(ON)*Qgd), an important index that represents the relationship between conduction loss and switching loss, to be lowered by about 80%[4]. This cuts the switching loss by about 20%[5], and lowers both on-resistance and switching loss. The new products contribute to higher equipment efficiency.

Toshiba will continue to expand its lineup of power devices and to enhance its production facilities, and aims to realize a carbon-free economy by providing high-performance power devices that are easy to use.

Notes:
[1] Toshiba has developed a device structure that reduces on-resistance per unit area (RDS(ON)A) by using a structure with built-in schottky barrier diode developed for the 2nd generation MOSFETs, and also reduces feedback capacitance in the JFET region.
[2] MOSFET: metal-oxide-semiconductor field-effect transistor
[3] Comparison of the new 1200V SiC MOSFETs when RDS(ON)A is set to 1 in the 2nd generation SiC MOSFETs. Toshiba survey.
[4] Comparison of the new 1200V SiC MOSFETs when RDS(ON)*Qgd is set to 1 in the 2nd generation SiC MOSFETs. Toshiba survey.
[5] Comparison of the new 1200V SiC MOSFETs and the 2nd generation SiC MOSFETs. Toshiba survey.

Applications
● Switching power supplies (servers, data center, communications equipment, etc.)
● EV charging stations
● Photovoltaic inverters
● Uninterruptible power supplies (UPS)

Features
● Low on-resistance per unit area (RDS(ON)A)
● Low drain-source on-resistance * gate-drain charge (RDS(ON)*Qgd)
● Low diode forward voltage: VDSF = -1.35 V (typ.) @VGS = -5 V

Main Specifications
(@Ta=25°C unless otherwise specified)

Part number

Package

Absolute maximum ratings

Drain-source 
voltage
VDSS
(V)

Gate-source 
voltage
VGSS
(V)

Drain 
current
(DC)
ID
(A)

@Tc=25

TW015N120C

TO-247

1200

-10 to 25

100

TW030N120C

60

TW045N120C

40

TW060N120C

36

TW140N120C

20

TW015N65C

650

100

TW027N65C

58

TW048N65C

40

TW083N65C

30

TW107N65C

20

Electrical characteristics

Drain-

Source 
On-

resistance
RDS(ON)
typ.
(mΩ)

Gate
threshold 
voltage
Vth
(V)

Total
gate
charge
Qg
typ.
(nC)

Gate- 
drain
charge
Qgd
typ.
(nC)

Input 
capacitance
Ciss
typ.
(pF)

Diode
forward 
voltage
VDSF
typ.
(V)

@VGS=18V

@VDS=10V

@VDS=400V,
f=100kHz

@VGS= -5V

15

3.0 to 5.0

158

23

6000

-1.35

30

82

13

2925

45

57

8.9

1969

60

46

7.8

1530

140

24

4.2

691

15

128

19

4850

27

65

10

2288

48

41

6.2

1362

83

28

3.9

873

107

21

2.3

600


Follow the links below for more on Toshiba SiC MOSFETs.
▶ SiC Power Devices
▶ SiC MOSFETs

Source: https://www.global.toshiba