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Toshibas Newly Launched 1200V and 1700V Silicon Carbide MOSFET Modules will Contribute to Smaller, More Efficient Industrial Equipment

2022-01-26 | 返回

KAWASAKI, Japan—Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two silicon carbide (SiC) MOSFET Dual Modules: “MG600Q2YMS3,” with a voltage rating of 1200V and drain current rating of 600A; and “MG400V2YMS3,” with a voltage rating of 1700V and drain current rating of 400A. The first Toshiba products with these voltage ratings, they join the previously released MG800FXF2YMS3 in a lineup of 1200V, 1700V and 3300V devices.



The new modules have mounting compatibility with widely used silicon (Si) IGBT modules. Their low energy loss characteristics meet needs for higher efficiency and size reductions in industrial equipment, such as converters and inverters for railway vehicles, and renewable energy power generation systems.


Applications
●Inverters and converters for railway vehicles
●Renewable energy power generation systems
●Motor control equipment
●High frequency DC-DC converter

Features
●Mounting compatible with Si IGBT modules
●Lower loss than Si IGBT modules
MG600Q2YMS3
 VDS(on)sense =0.9V (typ.) @ID=600A, Tch=25°C
 Eon=25mJ (typ.), Eoff=28mJ (typ.) @VDS=600V, ID=600A, Tch=150°C
MG400V2YMS3
 VDS(on)sense=0.8V (typ.) @ID=400A, Tch=25°C
 Eon=28mJ (typ.), Eoff=27mJ (typ.) @VDS=900V, ID=400A, Tch=150°C
●Built-in NTC Thermistor

Main Specifications
(unless otherwise specified, @Tc=25°C)

Part number

MG600Q2YMS3

MG400V2YMS3

Package

2-153A1A

Absolute

Drain-source voltage  VDSS  (V)

1200

1700

maximum

Gate-source voltage  VGSS  (V)

+25/-10

+25/-10

ratings

Drain current (DC)  ID  (A)

600

400

 

Drain current (pulsed)  IDP  (A)

1200

800

 

Channel temperature  Tch  (°C)

150

150

 

Isolation voltage Visol (Vrms)

4000

4000

Electrical

Drain-source on-voltage (sense)

@VGS =+20V,

0.9

0.8

characteristics

VDS(on)sense  typ.  (V)

Tch25°C

@ID600A

@ID400A

 

Source-drain on-voltage (sense)

@VGS =+20V,

0.8

0.8

 

VSD(on)sense  typ.  (V)

Tch25°C

@IS600A

@IS400A

 

Source-drain off-voltage (sense)

@VGS =-6V,

1.6

1.6

 

VSD(off)sense  typ.  (V)

Tch25°C

@IS600A

@IS400A

 

Turn-on switching loss Eon typ. (mJ)

@Tch=150°C

25

28

 

Eon  typ.  (mJ)

@ VDS=600V,

@VDS=900V,

 

 

 ID=600A

 ID=400A

 

Turn-off switching loss Eoff typ. (mJ) 

@Tch=150°C

28

27

 

Eoff  typ.  (mJ)

@ VDS=600V,

@VDS=900V,

 

 

ID=600A

 ID=400A

Thermistor characteristics

Rated NTC resistance  R  typ.  (kΩ)

5.0

5.0

NTC B value  B  typ.  (K)

TNTC=25 - 150°C

3375

3375


Follow the link for more on Toshiba’s SiC Power Devices.
SiC Power Devices

Source: https://www.global.toshiba