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Expansion of the lineup of 80 V N-channel power MOSFETs with the adoption of a new process that helps to improve the efficiency of power supplies : TK2R4E08QM, TK3R3E08QM, TK5R3E08QM, TK7R0E08QM, TK2R

2021-03-31 | 반환
Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched 10 products in its lineup of new generation 80 V N-channel power MOSFET “U-MOSⅩ-H series” suitable forswitching power supplies of industrial equipment. Three package types are available: “TK2R4E08QM, TK3R3E08QM, TK5R3E08QM and TK7R0E08QM” using TO-220, a through-hole type; “TK2R4A08QM, TK3R2A08QM, TK5R1A08QM and TK6R8A08QM” using TO-220SIS, an isolated through-hole type; and “TK5R1P08QM and TK6R9P08QM” using DPAK, a surface mount type.

By adopting the new generation U-MOSⅩ-H process with a low-voltage trench structure, the new products feature industry-leading[1] low drain-source On-resistance. This reduces conduction loss, helping reduce the power consumption of equipment. In addition, they have inherited the low gate switch charge characteristics from the existing generation process U-MOSVIII-H. This reduces the values of drain-source On-resistance x gate switch charge[2], a figure of merit for switching applications.

Notes:
[1] Among products with the same rating, as of February, 2021. Toshiba survey.
[2] Compared with TK100E08N1 (U-MOSVIII-H series), TK2R4E08QM has reduced its "typical drain-source On-resistance × typical gate switch charge" by about 8 %.

Features

> Industry’s lowest level[1] On-resistance :
    RDS(ON)=2.44 mΩ (max) @VGS=10 V (TK2R4E08QM)
> Low charge (output and gate switch)
> Low gate voltage drive (6 V drive)

Applications

> Switching power supplies for industrial equipment
    (High efficiency AC-DC converters, high efficiency DC-DC converters, etc.)
> Motor control equipment (Motor drivers, etc.)

Product Specifications
(Unless otherwise specified, @Ta=25 °C)

Part
number

Absolute
maximum
ratings

Drain-source
On-resistance
R
DS(ON)
max
(mΩ)

Total
gate
charge
Q
g
typ.
(nC)

Gate
switch
charge
Q
SW
typ.
(nC)

Output
charge
Q
oss
typ.
(nC)

Drain-
source
voltage
V
DSS
(V)

Drain
current
(DC)
I
D
(A)

@Tc=
25 °C

@VGS=
10 V

@VGS=
6 V

TK2R4E08QM

80

120

2.44

3.2

178

52

210

TK3R3E08QM

120

3.3

4.2

110

31

119

TK5R3E08QM

120

5.3

7.3

55

17

66

TK7R0E08QM

64

7.0

9.7

39

11.6

46

TK2R4A08QM

100

2.44

3.1

179

54

210

TK3R2A08QM

92

3.2

4.1

102

31

119

TK5R1A08QM

70

5.1

4.1

54

17

66

TK6R8A08QM

58

6.8

9.5

39

13

46

TK5R1P08QM

84

5.1

7.0

56

17

66

TK6R9P08QM

62

6.9

9.6

39

11.6

46


Internal Circuits


Application Circuit Examples


Note: The application circuits shown in this document are provided for reference purposes only.
          Thorough evaluation is required, especially at the mass production design stage.
          Providing these application circuit examples does not grant any license for industrial property rights.

* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

Source:http://www.semicon.toshiba.co.jp/eng/