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Toshiba Launches Silicon Carbide MOSFET Module that Contributes to Higher Efficiency and Miniaturization of Industrial Equipment

2021-02-25 | 반환
TOKYO—Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “MG800FXF2YMS3,” a silicon carbide (SiC) MOSFET module integrating newly developed dual channelSiC MOSFET chips with ratings of 3300V and 800A, for industrial applications. Volume production will start in May 2021.

To achieve a channel temperature of 175°C, the new product adopts an iXPLV (intelligent fleXible Package Low Voltage) package with silver sintering internal bonding technology and high mounting-compatibility The new module meet the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway vehicles, and renewable energy power generation systems.

Applications
> Inverters and converters for railway vehicles
> Renewable energy power generation systems
> Industrial motor control equipment

Features
> Drain-source voltage rating : VDSS=3300V
> Drain current rating : ID=800A Dual
> High channel temperature range : Tch=175°C
> Low loss :
   Eon=250mJ (typ.)
   Eoff=240mJ (typ.)
   VDS(on)sense=1.6V (typ.)
> Low stray inductance : Ls=12nH (typ.)
> High power density small iXPLV package

Main Specifications
(unless otherwise specified, @Tc=25°C)

Part number

MG800FXF2YMS3

Package

iXPLV

Absolute
maximum
ratings

Drain-source voltage  VDSS  (V)

3300

Gate-source voltage  VGSS  (V)

+25/-10

Drain current (DC)  ID  (A)

800

Drain current (pulsed)  IDP  (A)

1600

Channel temperature  Tch  (°C)

175

Isolation voltage  Visol  (Vrms)

6000

Electrical
characteristics

 

Drain-source voltage on-voltage (sense)
V
DS(on)sense typ.  (V)

@VGS= +20V,
I
D=800A

1.6

Source-drain voltage on-voltage (sense)
V
SD(on)sense typ.  (V)

@VGS= +20V,
I
S=800A

1.5

Source-drain voltage off-voltage (sense)
V
SD(off)sense typ.  (V)

@VGS6V,
I
S=800A

2.3

Stray inductance module  LSPN typ.  (nH)

12

Turn-on switching loss
E
on typ.  (mJ)

@VDD=1800V,
ID=800A,
T
ch=150°C

250

Turn-off switching loss
E
off typ.  (mJ)

@VDD=1800V,
I
D=800A,
T
ch=150°C

240


Source: http://www.semicon.toshiba.co.jp/eng/