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Toshiba Releases 3rd Generation 650V SiC Schottky Barrier Diodes that Contribute to More Efficient Industrial Equipment

2023-07-13 | 반환
KAWASAKI, Japan—Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched the "TRSxxx65H series,” the company’s third and latest[1] generation of silicon carbide (SiC) Schottky barrier diodes (SBDs) for industrial equipment. Volume shipments of the first 12 products, all 650V, start today, with seven products housed in TO-220-2L packages and five in DFN8×8 packages.

The new products use a new metal in a third generation SiC SBD chip that optimizes the junction barrier Schottky (JBS) structure[2] of the second generation products. They achieve industry-leading[3] low forward voltage of 1.2V (Typ.), 17% lower than the 1.45V (Typ.) of the previous generation. They also improve the trade-offs between forward voltage and total capacitive charge, and between forward voltage and reverse current, which reduces power dissipation and contributes to high efficiency of equipment.

Notes:
[1] As of July 2023.
[2] JBS structure lowers the electric field at the Schottky interface and reduces leakage current.
[3] As of July 2023, Toshiba survey.

Applications

>Switching power supplies
>EV charging stations
>Photovoltaic inverters

Features

>Industry-leading[3] low forward voltage: VF=1.2V (Typ.) (IF=IF(DC))
>Low reverse current:
  TRS6E65H IR=1.1μA (Typ.) (VR=650V)
>Low total capacitive charge:
  TRS6E65H QC=17nC (Typ.) (VR=400V, f=1MHz)

Main Specifications
(Unless otherwise specified, Ta=25°C)

Part number

Package

Absolute maximum ratings

 

Repetitive peak reverse
voltage V
RRM (V)

Forward
DC
current
I
F(DC) (A)

Non-repetitive
peak forward
surge current
I
FSM (A)

 

 

Temperature conditions Tc (°C)

f=50Hz (half-sine wave, t=10ms), Tc=25°C

Square wave, t=10μs, Tc=25°C

TRS2E65H

TO-220-2L

650

2

164

19

120

 

TRS3E65H

3

161

28

170

 

TRS4E65H

4

158

36

230

 

TRS6E65H

6

153

41

310

 

TRS8E65H

8

149

56

410

 

TRS10E65H

10

148

62

510

 

TRS12E65H

12

148

74

640

 

TRS4V65H

DFN8×8

4

155

28

230

 

TRS6V65H

6

151

41

310

 

TRS8V65H

8

148

45

410

 

TRS10V65H

10

145

54

510

 

TRS12V65H

12

142

60

640

 


Electrical characteristics

Forward voltage
(pulse measurement) V
F (V)

Reverse current
(pulse measurement) I
R (μA)

Total capacitance Ct (pF)

Total capacitive charge QC (nC)

IF=IF(DC)

VR=650V

VR=400V, f=1MHz

Typ.

Typ.

Typ.

Typ.

1.2

0.2

10

6.5

0.4

14

9

0.6

17

12

1.1

24

17

1.5

31

22

2.0

38

27

2.4

46

33

0.6

17

12

1.1

24

17

1.5

31

22

2.0

38

27

2.4

46

33


Follow the links below for more on the new product.

TRS2E65H
TRS3E65H
TRS4E65H
TRS6E65H
TRS8E65H
TRS10E65H
TRS12E65H
TRS4V65H
TRS6V65H
TRS8V65H
TRS10V65H
TRS12V65H

Follow the link below for more on Toshiba’s SiC Schottky Barrier Diodes.

SiC Schottky Barrier Diodes

* Company names, product names, and service names may be trademarks of their respective companies.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

Source: https://www.global.toshiba