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Expanded lineup with a discrete IGBT rated at 1350 V/30 A that helps reduce power consumption of home appliances : GT30N135SRA

2021-07-20 | Return

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched a discrete IGBT rated at 1350 V/30 A, “GT30N135SRA,” for home appliances—such as IH cooking heaters, IH rice

cookers and microwave ovens—that use voltage resonance circuits with AC200 V input, expanding its lineup.

The new product GT30N135SRA features a collector current rating of 30 A[1], which is 1.5 times that of the existing product GT20N135SRA. This has led to an increase in its control power capacity to 2400 W. And the typical collector-emitter saturation voltage has been reduced to 1.65 V[2] and the typical diode forward voltage has been reduced 1.75 V[3] to reduce conduction loss. Together with the turn-off loss, this allows total loss to be reduced.

This product suppresses short circuit current by suppressing saturation current as the existing product does. It can suppress the short circuit current of a resonance capacitor that is generated when the appliance is starting up. It reduces the peak value of short circuit current by about 40 % as the existing product does and suppresses non-repetitive peak collector current to 260 A or lower.

GT30N135SRA is following the concept of the existing product, it can reduce power consumption of equipment by reduction of conducting loss, and can suppress short circuit current.

Notes :
[1] @Tc=100 °C
[2] @IC=30 A, VGE=15 V, Ta=25 °C
[3] @IF=30 A, VGE=0 V, Ta=25 °C

Applications
Only for home appliance voltage resonance

> IH rice cooker
> IH cooking heater
> Microwave oven, etc.

Features

> 6.5th generation RC structure (diode built-in)
> Low collector-emitter saturation voltage : VCE(sat)=1.65 V (typ.) @IC=30 A, Ta=25 °C
> Low diode forward voltage : VF=1.75 V (typ.) @IF=30 A, Ta=25 °C

Main Specifications

(Unless otherwise specified, @Ta=25 °C)

Part number			GT30N135SRA^[4]	GT20N135SRA
Package			TO-247
Absolute maximum ratings	Collector-emitter voltage V_CES (V)		1350
	Collector current (DC) I_C (A)	@T_c=25 °C	60	40
		@T_c=100 °C	30	20
	Junction temperature T_j (°C)		175
Electrical characteristics	Collector-emitter saturation voltage V_CE(sat) typ. (V)	@I_C=30 A, V_GE=15 V	1.65	1.60^[5]
	Diode forward voltage V_F typ. (V)	@I_F=30 A, V_GE=0 V	1.75	1.75^[6]
	Switching time (fall time) t_f typ. (µs)		0.25
Thermal characteristics	Junction-to-case thermal resistance R_th(j-c) max (°C/W)		0.43	0.48

Notes :
[4] New product
[5] @IC=20 A, VGE=15 V, Ta=25 °C
[6] @IF=20 A, VGE=0 V, Ta=25 °C

Internal Circuit

Application Circuit Example

Note :
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

Source: http://www.semicon.toshiba.co.jp/eng/